Prof. Sangwan Kim's publication
Journal Conference Patent Thesis Award
[30] Sangwan Kim, Seungwon Go, Heebum Kang, Jaekyun Son and Sunwoo Lee,
“Memory device including ferroelectric tunnel field-effect transistor and method of operating thereof”
Korean Patent Filed 10-2025-0005174, Jan. 14, 2025
[29] Sangwan Kim, Jae Yeon Park, Dong Keun Lee and Jaekyun Son,
“Structure and manufacturing method of memory device specialized for artificial intelligence computation”
Korean Patent Filed 10-2024-0199765, Dec. 30, 2024
[28] Sangwan Kim, Dong Keun Lee, Hyungju Noh, Jae Yeon Park, Seungwon Go and Taegun Kim,
“Channel-stacked gate-all-around ferroelectric field-effect transistor with independent layer-specific source/bit line metal interconnects and fabrication method thereof”
Korean Patent Filed 10-2024-0196632, Dec. 26, 2024
Korean Patent Filed 10-2025-0043596, Apr. 03, 2025
[27] Sangwan Kim, Sihyun Kim, Hyungju Noh, Dong Keun Lee, Jaewon Jang and Yelim Jeon,
“Memory device and method of manufacturing the same”
Korean Patent Filed 10-2024-0177966, Dec. 03, 2024
[26] Sangwan Kim, Shinhee Kim, Hyunho Ahn and Hyungju Noh,
“Semiconductor device”
Korean Patent Filed 10-2024-0114529, Aug. 26, 2024
[25] Sangwan Kim, Seungwon Go, and Sunwoo Lee
“Nonvolatile memory device and method for operating the same”
Korean Patent Filed 10-2024-0069459, May 28, 2024
[24] Sangwan Kim, Hyungju Noh, Jae Yeon Park, Jaekyun Son, Seungwon Go, and Dong Keun Lee,
“Tunnel field-effect transistor-based ferroelectric-charge trap hybrid memory device and operation method thereof”
Korean Patent Filed 10-2024-0043073, Mar. 29, 2024
Korean Patent Filed 10-2024-0201978, Dec. 31, 2024
[23] Sangwan Kim, Dong Keun Lee, Shinhee Kim, Hyunho Ahn, Seungwon Go, Hyungju Noh,
Tae Gun Kim, and Jae Yeon Park,
“Channel-stacked gate-all-around ferroelectric field-effect transistor and fabrication method thereof”
Korean Patent Filed 10-2024-0043029, Mar. 29, 2024
Korean Patent Filed 10-2024-0201882, Dec. 31, 2024
[22] Jang Hyun Kim, Juhong Min and Sangwan Kim,
“Sense amplifier, memory device using the same and operating method of memory device”
Korean Patent Filed
[21]
“Charge trap flash-based heterogeneous memory device integrated into one cell and fabrication method thereof”
Korean Patent Filed
[20] Sangwan Kim, Seungwon Go, Jae Yeon Park, Hyungju Noh, Dongkeun Lee and Seonggeun Kim,
“Operating method of tunnel field effect transistor”
Korean Patent Filed
Korean Patent No. 10-2780187 Mar. 07, 2025
[19] Garam Kim, Sangwan Kim, and Jang Hyun Kim,
“Light emitting diode for realizing multi-color light by using trench without using phosphor”
Korean Patent Filed 10-2022-0021517, Feb. 18, 2022
Korean Patent No. 10-2588011 Oct. 06, 2023
[18] Sangwan Kim, Jae Yeon Park, Shinhee Kim, and Seungwon Go,
“Recessed-channel field-effect transistor and fabrication method thereof”
Korean Patent Filed 10-2021-0027700, Mar. 02, 2021
Korean Patent No. 10-2444326 Sep. 13, 2022
[17] Sangwan Kim, Seungwon Go, and Garam Kim,
“1T DRAM device and method of fabricating the same”
Korean Patent Filed 10-2020-0181814, Dec. 23, 2020
Korean Patent No. 10-2419607 Jul. 06, 2022
[16] Sangwan Kim, Seokjung Kang, Hyun-ho Ahn, Seunghyun Yun, and Jeongmin Oh,
“Tunnel field-effect transistors with finger-shaped source and fabrication method thereof”
Korean Patent Filed 10-2019-0177566, Dec. 30, 2019
Korean Patent No. 10-2226079, Mar. 04, 2021
[15] Sangwan Kim and Woo Young Choi,
“Tunneling field-effect transistor and method for manufacturing thereof”
Korean Patent Filed 10-2018-0063433, Jun. 01, 2018
Previous (temporary): Korean Patent Filed 10-2018-0037590, Mar. 30, 2018
Korean Patent No. 10-2099896, Apr. 06, 2020
[14] Byung-Gook Park, Ryoongbin Lee, Sihyun Kim, Kitae Lee, and Sangwan Kim,
“Tunneling field-effect transistor having high-k dielectric spacer and fabrication method thereof”
Korean Patent Filed 10-2018-0032522, Mar. 21, 2018
[13] Sangwan Kim, Hwa Young Gu, Seung Hyun Lee, and Jeong Uk Park,
“Recessed-channel reconfigurable field-effect transistor”
Korean Patent Filed 10-2017-0090488, Jul. 17, 2017
Korean Patent No. 10-1881068, Jul. 17, 2018
[12] Woo Young Choi and Sang Wan Kim,
“Self-aligned heterojunction tunnel field-effect transistor using selective germanium condensation and sidewall processes”
Korean Patent Filed 10-2015-0088792, Jun. 23, 2015
Korean Patent No. 10-1682420, Nov. 29, 2016
[11] Byung-Gook Park, Dae Woong Kwon, Jisoo Chang, Jang Hyun Kim, and Sang Wan Kim,
“Fabrication method of thin film transistor with rounded gate”
Korean Patent Filed 10-2011-0015243, Feb. 21, 2011
Korean Patent No. 10-1195544, Oct. 23, 2012
[10] Byung-Gook Park and Sang Wan Kim,
“1T DRAM device having two gates on recessed body and method of operating and fabricating the same”
Korean Patent Filed 10-2010-0056615 , Jun. 15, 2010
Korean Patent No. 10-1163711, Jul. 2, 2012
[09] Byung-Gook Park and Sang Wan Kim,
“Transistor using CNT for gate and fabrication method thereof”
Korean Patent Filed 10-2010-0073924 , Jul. 30, 2010
Korean Patent No. 10-1160585, Jun. 21, 2012
[08] Byung-Gook Park, Sang Wan Kim, and Woo Young Choi,
“Tunneling field effect transistor having FinFET structure of independent dual gates and fabrication method thereof”
Korean Patent Filed 10-2012-0052537, May 17, 2012
Korean Patent No. 10-1286707, Jul. 10, 2013
[07] Byung-Gook Park, Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, and Sang Wan Kim,
“Two bit RRAM using inverted staggered thin transistor structure”
Korean Patent Filed 10-2011-0015241, Feb. 21, 2011
Korean Patent No. 10-1113885, Feb. 1, 2012
[06] Byung-Gook Park, Dae Woong Kwon, Jae Chul Park, Sang Wan Kim, Jang Hyun Kim, and Jisoo Chang,
“Transistors and electronic devices including the same”
Korean Patent Filed 10-2010-0099542, Oct. 12, 2010
[05] Byung-Gook Park, Dae Woong Kwon, Jae Chul Park, Sang Wan Kim, Jang Hyun Kim, and Jisoo Chang,
“Transistors and electronic devices including the same”
United States Patent Filed 13096314, Apr. 28, 2011
United States Patent No. 9123817, Sep. 1, 2015
[04] Hyoung Soo Ko, Byung Gook Park, Seung Bum Hong, Chul Min Park, Woo Young Choi, Jong Pil Kim, Jae Young Song, and Sang Wan Kim,
“Semiconductor probe structure using impact-ionization metal oxide semiconductor device, information storing device therewith and manufacturing method thereof”
Korean Patent Filed 10-2007-0004973, Jan. 16, 2007
Korean Patent No. 10-0804738, Feb. 12, 2008
[03] Hyoung Soo Ko, Byung Gook Park, Seung Bum Hong, Chul Min Park, Woo Young Choi, Jong Pil Kim, Jae Young Song, and Sang Wan Kim,
“Semiconductor probe structure using impact-ionization metal oxide semiconductor device, information storing device therewith and manufacturing method thereof”
United States Patent Filed 11957575, Dec. 12, 2007
United States Patent No. 7915109, Mar. 29, 2011
[02] Hyoung Soo Ko, Byung-Gook Park, Seung Bum Hong, Chul Min Park, Woo Young Choi, Jong Pil Kim, Jae Young Song, and Sang Wan Kim,
“Method of manufacturing enhancement type semiconductor probe and information storage device having the semiconductor probe using the same”
Korean Patent Filed 10-2007-0022550, Mar. 7, 2007
Korean Patent No. 10-0842923, Jun. 25, 2008
[01] Hyoung Soo Ko, Byung-Gook Park, Seung Bum Hong, Chul Min Park, Woo Young Choi, Jong Pil Kim, Jae Young Song, and Sang Wan Kim,
“Method of manufacturing enhancement type semiconductor probe and information storage device having the semiconductor probe using the same”
United States Patent Filed 12043982, Mar. 07, 2008
United States Patent No.7700393, Apr. 20, 2010