Ph.D.

• [2]
  Shinhee Kim (김신희), “Demonstration of ferroelectric field effect transistor based synaptic array for convolution neural networks,” directed by Professor Sangwan Kim, Aug. 2024. (Sogang University)
• [1]
  Sangwan Kim (김상완), “L-shaped tunnel field-effect transistors (L-shaped TFETs) with high current drivability and low subthreshold swing,” directed by Professor Byung-Gook Park, Feb. 2014. (Seoul National University)

M.S.

• [13]
  Yelim Jeon (전예림), “Gate-injection ferroelectric flash (GI-FeFlash) for large memory window and high-speed NAND flash memory,” directed by Professor Sangwan Kim, Feb. 2025 (Sogang University)
• [12]
  Jaekyun Son (손재균), “Demonstration of reconfigurable feedback field−effect transistor(FBFET) with charge trap layer for content−addressable memory(CAM) operation,” directed by Professor Sangwan Kim, Feb. 2025 (Sogang University)
• [11]
  Taegun Kim (김태건), “Ferroelectric feedback field-effect transistor (Fe-FBFET) as a delay-synapse device for spiking neural network,” directed by Professor Sangwan Kim, Feb. 2025 (Sogang University)
• [10]
  Dong Keun Lee (이동근), “Transient response of negative capacitance field-effect transistor-based inverter,” directed by Professor Sangwan Kim, Feb. 2023 (Ajou University)
• [9]
  Munejeong Choe (최문정), “Analysis of ferroelectric tunnel junction with metal-ferroelectric-insulator-metal structure applying high-k material as an insulator layer,” directed by Professor Sangwan Kim, Feb. 2022 (Ajou University)
• [8]
  Sora Park (박소라), “Junctionless tunnel field-effect transistor with extended gate structure,” directed by Professor Sangwan Kim, Feb. 2022 (Ajou University)
• [7]
  Joon Ho Park (박준호), “Study about on-off characteristic of ferroelectric tunnel junction (FTJ) with dielectric layer inserted in ferroelectric layer,” directed by Professor Sangwan Kim, Feb. 2022 (Ajou University)
• [6]
  SeokJung Kang (강석중), “Investigation of self-heating effects in stacked gate-all-around MOSFET with wrap-around contact,” directed by Professor Sangwan Kim, Feb. 2021 (Ajou University)
• [5]
  KyungJin Rim (임경진), “Capacitance matching of the negative capacitance field-effect transistor (NCFET) depending on Landau parameters,” directed by Professor Sangwan Kim, Aug. 2020. (Ajou University)
• [4]
  Ye Sung Kwon (권예성), “Improvement of ferroelectricity in HfO2-based metal-ferroelectric-insulator-silicon capacitor by forming gas annealing,” directed by Professor Sangwan Kim, Aug. 2020. (Ajou University)
• [3]
  Seong-Su Shin (신성수), “L-shaped tunnel field-effect transistor (TFET) with stacked gates to suppress the corner effect for the better electrical characteristics,” directed by Professor Sangwan Kim, Feb. 2020. (Ajou University)
• [2]
  Hwa Young Gu (구화영), “Study about ferroelectricity of hafnium-aluminum oxide (HfAlO) capacitors depending on aluminum content and rapid thermal annealing temperature,” directed by Professor Sangwan Kim, Feb. 2020. (Ajou University)
• [1]
  Sangwan Kim (김상완), “Investigation of resistive probe used for writing/reading in ferroelectric material,” directed by Professor Byung-Gook Park, Feb. 2008. (Seoul National University)