International Journal

• [63]
  Seonggeun Kim, Seungwon Go, Sihyun Kim and Sangwan Kim^*, “Impact of Al-doping on Ferroelectricity and Reliability of HfZrO Film Under High Temperature Annealing,” IEEE Electron Device Letters, Vol. 46, No. 9, pp. 1648-1651, Sep. 2025. [SCIE]
  DOI: 10.1109/LED.2025.3585154
• [62]
  Seungwon Go, Sunwoo Lee, Jaekyun Son, Dong Keun Lee, Hyungju Noh, Jae Yeon Park, Seonggeun Kim, Hyunho Ahn, Sihyun Kim and Sangwan Kim^*, “Demonstration of ferroelectric tunnel field-effect transistor for low power synapse device," IEEE Transactions on Nanotechnology,Vol. 24, pp. 413-416, Aug. 2025. [SCIE]
  DOI: 10.1109/TNANO.2025.3595532
• [61]
  Hyunjeong Doh, Hyeokjun You, Hwijoong Kim, Minki Son, Sejoong Kim, Dongil Ho^*, Sihyun Kim, Choongik Kim^*, “Improved AC Drain Bias Stability in In-Zn-O TFTs with HF doped Heterobilayer Structure," ACS Applied Materials&Interface, Vol. 17, No. 28, Jul. 2025. [SCIE]
  DOI: 10.1021/acsami.5c05480
• [60]
  Jae Yeon Park, Seungwon Go, Dong Keun Lee, Seonggeun Kim, Sihyun Kim^* and Sangwan Kim^*, “Suppression of reverse drain-induced barrier lowering in negative capacitance FETs using a hetero-metal-gate structure,” IEEE Access, Vol. 13, pp. 101781-101788, Jun. 2025. [SCIE] (*co-correspondence)
  DOI: 10.1109/ACCESS.2025.3576583
• [59]
  Sihyun Kim#*, Hyun-Min Kim, Ki-Ryun Kwon, and Daewoong Kwon*, “Stacked Nanosheet Gate-All-Around Morphotropic Phase Boundary Field-Effect Transistors,” Advanced Science, Vol. 12 No. 18, pp. 2413090(1-9), May 2025. [SCIE] (#first author, *co-correspondence)
  DOI: 10.1002/advs.202413090
• [58]
  Seokwoo Hong, Sihyun Kim, Hyunwoo Kim, Ickhyun Song*, Jang Hyun Kim*, and Garam Kim*, “Optical characterization of GaN-based LED devices through spectroscopic ellipsometry,” Optics and Laser Technology, Vol. 184, pp. 112560 (1-9), Jun. 2025. [SCIE] (*co-correspondence)
  DOI: 10.1016/j.optlastec.2025.112560

• [57]
  Seungwon Go, Hyungju Noh, Dong Keun Lee, Seonggeun Kim, Jae Yeon Park, Un-hyun Im, Hojoong Lee, Sihyun Kim* and Sangwan Kim*, “Impact of Zr precursor on Electrical Characteristics of HfZrO Laminated Structure,” IEEE Electron Device Letters, Vol. 45, No. 10, pp. 2001-2004, Oct. 2024. [SCIE] (*co-correspondence)
  DOI: 10.1109/LED.2024.3435547
• [56]
  Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyungju Noh, Tae-Hyeon Kim, Sihyun Kim* and Sangwan Kim*, “Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation,” Solid-State Electronics, Vol. 216, p. 108917 (1-7), Jun. 2024. [SCIE] (*co-correspondence)
  DOI: 10.1016/j.sse.2024.108917
• [55]
  Been Kwak, Kitae Lee, Sihyun Kim*, and Daewoong Kwon*, “Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications,” IEEE Electron Device Letters, Vol. 45, No. 5, pp. 813-816, May. 2024. [SCIE] (*co-correspondence)
  DOI: 10.1109/LED.2024.3370592
• [54]
  Kitae Lee, Jiyong Yim, Wonjun Shin, Sihyun Kim*, and Daewoong Kwon*, “Scaling effects on Memory characteristics of Ferroelectric Field-effect Transistors,” IEEE Electron Device Letters, Vol. 45, No. 5, pp. 805-808, May. 2024. [SCIE] (*co-correspondence)
  DOI: 10.1109/LED.2024.3381110
• [53]
  Kitae Lee, Been Kwak, Sihyun Kim*, and Daewoong Kwon*, “Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels,” IEEE Electron Device Letters, Vol. 45, No. 2, pp. 180-183, Feb. 2024. [SCIE] (*co-correspondence)
  DOI: 10.1109/LED.2023.3340254

• [52]
  Minhye Oh, Kitae Lee, Sihyun Kim, and Byung-Gook Park, “Data-Driven Multi-Objective Optimization with Neural Network-based Sensitivity Analysis for Semiconductor Devices,” Engineering Applications of Artificial Intelligence, Vol. 117, Part A, p. 105546 (1-12), Jan. 2023. [SCIE]
  DOI: 10.1016/j.engappai.2022.105546
• [51]
  Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application,” IEEE Journal of the Electron Devices Society, Vol. 11, No. 1, pp. 95-100, Jan. 2023. [SCIE]
  DOI: 10.1109/JEDS.2023.3237386

• [50]
  Seunghwan Song, Munhyeon Kim, Bosung Jeon, Donghyun Ryu, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Jae-Joon Kim, Wonbo Shim, Daewoong Kwon, and Byung-Gook Park, “Spiking Neural Network with Weight-Sharing Synaptic Array for Multi-Input Processing,” IEEE Electron Device Letters, Vol. 43, No. 10, pp. 1657-1660, Aug. 2022. [SCIE]
  DOI: 10.1109/LED.2022.3197239
• [49]
  Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Investigation on Variability of Ferroelectric-Gate Field-Effect Transistor Memory by Random Spatial Distribution of Interface Trap,” IEEE Transactions on Nanotechnology, Vol. 21, No. 1, pp. 534-538, Sep. 2022. [SCIE]
  DOI: 10.1109/TNANO.2022.3207505
• [48]
  Munhyeon Kim, Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Novel Dual Liner Process for Side-Shielded Forksheet Device with Superior Design Margin,” IEEE Transactions on Electron Devices, Vol. 69, No. 5, pp. 2232-2235, May. 2022. [SCIE]
  DOI: 10.1109/TED.2022.3156957
• [47]
  Soyoun Kim, Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Sangwan Kim, and Byung-Gook Park, “Investigation of device performance for fin angle optimization in FinFET and gate-all-around FETs for 3 nm-node and beyond,” IEEE Transactions on Electron Devices, Vol. 69, No. 4, pp. 2088-2093, Apr. 2022. [SCIE]
  DOI: 10.1109/TED.2022.3154683
• [46]
  Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, “Comprehensive TCAD-Based Validation of Interface Trap-Assisted Ferroelectric Polarization in Ferroelectric-Gate Field-Effect Transistor Memory,” IEEE Transactions on Electron Devices, Vol. 69, No. 3, pp. 1048-1053, Feb. 2022. [SCIE]
  DOI: 10.1109/TED.2022.3144965
• [45]
  Manh-Cuong Nguyen, Kitae Lee, Sihyun Kim, Sangwook Youn, Yeongjin Hwang, Hyungjin Kim, Rino Choi, and Daewoong Kwon, “Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices,” IEEE Electron Device Letters, Vol. 43, No. 1, pp. 17-20, Jan. 2022. [SCIE]
  DOI: 10.1109/LED.2021.3127927
• [44]
  Wonjun Shin, Jong-Ho Bae, Sihyun Kim, Kitae Lee, Dongseok Kwon, Byung-Gook Park, Daewoong Kwon, and Jong-Ho Lee, “Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET,” IEEE Electron Device Letters, Vol. 43, No. 1, pp. 13-16, Jan. 2022. [SCIE]
  DOI: 10.1109/LED.2021.3127175

• [43]
  Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Ferroelectric-Metal Field-Effect Transistor with Recessed Channel for 1T-DRAM Application,” IEEE Journal of the Electron Devices Society, Vol. 10, No. 1, pp. 13-18, Nov. 2021. [SCIE]
  DOI: 10.1109/JEDS.2021.3127955
• [42]
  Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Suppression of Statistical Variability in Stacked Nanosheet Using Floating Fin Structure,” IEEE Electron Device Letters, Vol. 42, No. 11, pp. 1580-1583, Nov. 2021. [SCIE]
  DOI: 10.1109/LED.2021.3116461
• [41]
  Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory,” IEEE Electron Device Letters, Vol. 42, No. 11, pp. 1607-1610, Nov. 2021. [SCIE]
  DOI: 10.1109/LED.2021.3116797
• [40]
  Junsu Yu, Kyung Kyu Min, Yeonwoo Kim, Sihyun Kim, Sungmin Hwang, Tae-Hyeon Kim, Changha Kim, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, “A Novel Physical Unclonable Function (PUF) using 16 × 16 Pure-HfOx Ferroelectric Tunnel Junction Array for Security Applications,” Nanotechnology, Vol. 32, No. 48, p. 485202 (1-12), Sep. 2021. [SCIE]
  DOI: 10.1088/1361-6528/ac1dd5
• [39]
  Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Gate-First Negative Capacitance Field-Effect Transistor with Self-Aligned Nickel-Silicide Source and Drain,” IEEE Transactions on Electron Devices, Vol. 68, No. 9, pp. 4754-4757, Sep. 2021. [SCIE]
  DOI: 10.1109/TED.2021.3097292
• [38]
  Manh-Cuong Nguyen, Sihyun Kim, Kitae Lee, Ji-Yong Yim, Rino Choi, and Daewoong Kwon, “Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing,” IEEE Electron Device Letters, Vol. 42, No. 9, pp. 1295-1298, Sep. 2021. [SCIE]
  DOI: 10.1109/LED.2021.3096248
• [37]
  Ryoongbin Lee, Junil Lee, Kitae Lee, Soyoun Kim, Hyunho Ahn, Sihyun Kim, Hyun-Min Kim, Changha Kim, Jong-Ho Lee, Sangwan Kim, and Byung-Gook Park, “Vertically-stacked Si0.2Ge0.8 nanosheet tunnel FET with 70 mV/dec average subthreshold swing,” IEEE Electron Device Letters, Vol. 42, No. 7, pp. 962-965, Jul. 2021. [SCIE]
  DOI: 10.1109/LED.2021.3079246
• [36]
  Sihyun Kim, Kitae Lee, Min-Hye Oh, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Physical Unclonable Functions Using Ferroelectric Tunnel Junctions,” IEEE Electron Device Letters, Vol. 42, No. 6, pp. 816-819, Jun. 2021. [SCIE]
  DOI: 10.1109/LED.2021.3075427
• [35]
  Sihyun Kim, Ryoongbin Lee, Daewoong Kwon, Tae-Hyeon Kim, Tae Jung Park, Sung-Jin Choi, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, “Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors with Optimized Multi-Sensing Currents,” IEEE Sensors Journal, Vol. 21, No. 7, pp. 8839-8846, Apr. 2021. [SCIE]
  DOI: 10.1109/JSEN.2021.3054052
• [34]
  Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Effects of Process-Induced Defects on Polarization Switching in Ferroelectric Tunneling Junction Memory,” IEEE Electron Device Letters, Vol. 42, No. 3, pp. 323-326, Mar. 2021. [SCIE]
  DOI: 10.1109/LED.2021.3052306

• [33]
  Kitae Lee, Sihyun Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, “Suppression of Reverse Drain induced Barrier Lowering in Negative Capacitance FDSOI Field Effect Transistor using Oxide Charge Trapping Layer,” Semiconductor Science and Technology, Vol. 35, No. 12, p. 125003 (1-9), Dec. 2020. [SCIE]
  DOI: 10.1088/1361-6641/abb5e4
• [32]
  Hyun Woo Kim, Sihyun Kim, Kitae Lee, Junil Lee, Byung-Gook Park, and Daewoong Kwon, “Demonstration of Tunneling Field-Effect Transistor Ternary Inverter,” IEEE Transactions on Electron Devices, Vol. 67, No. 10, pp. 4541-4544, Oct. 2020. [SCIE]
  DOI: 10.1109/TED.202.3017186
• [31]
  Sihyun Kim, Kitae Lee, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, “Vertically Stacked Gate-All-Around Structured Tunneling-Based Ternary-CMOS,” IEEE Transactions on Electron Devices, Vol. 67, No. 9, pp. 3889-3893, Sep. 2020. [SCIE]
  DOI: 10.1109/TED.2020.3011384
• [30]
  Kitae Lee, Jong-Ho Bae, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon, “Ferroelectric-Gate Field-Effect Transistor Memory with Recessed Channel,” IEEE Electron Device Letters, Vol. 41, No. 8, pp. 1201-1204, Aug. 2020. [SCIE]
  DOI: 10.1109/LED.2020.3001129
• [29]
  Kitae Lee, Sihyun Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, “Analysis on Reverse Drain-Induced Barrier Lowering and Negative Differential Resistance of Ferroelectric-Gate Field-Effect Transistor Memory,” IEEE Electron Device Letters, Vol. 41, No. 8, pp. 1197-1200, Aug. 2020. [SCIE]
  DOI: 10.1109/LED.2020.3000766
• [28]
  Kitae Lee, Sihyun Kim, Daewoong Kwon, and Byung-Gook Park, “Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation,” Applied Sciences, Vol. 10, No. 14, p. 4977 (1-7), Jul. 2020. [SCIE]
  DOI: 10.3390/app10144977
• [27]
  Ryoongbin Lee, Junil Lee, Kitae Lee, Soyoun Kim, Sihyun Kim, Sangwan Kim, and Byung-Gook Park, “I-shaped SiGe fin tunnel field-effect transistor with high ION/IOFF ratio,” Journal of Nanoscience and Nanotechnology, Vol. 20, No. 7, pp. 4298-4302, Jul. 2020. [SCIE]
  DOI: 10.1166/jnn.2020.17794
• [26]
  Sihyun Kim, Munhyeon Kim, Donghyun Ryu, Kitae Lee, Soyoun Kim, Junil Lee, Ryoongbin Lee, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, “Investigation of electrical characteristic behavior induced by channel-release process in stacked nanosheet gate-all-around MOSFETs,” IEEE Transactions on Electron Devices, Vol. 67, No. 6, pp. 2648-2652, Jun. 2020. [SCIE]
  DOI: 10.1109/TED.2020.2989416
• [25]
  Donghyun Ryu, Munhyeon Kim, Sihyun Kim, Yunho Choi, Junsu Yu, Jong-Ho Lee, and Byung-Gook Park, “Design and Optimization of Triple-k Spacer Structure in Two-Stack Nanosheet FET From OFF-State Leakage Perspective,” IEEE Transactions on Electron Devices, Vol. 67, No. 3, pp. 1317-1322, Mar. 2020. [SCIE]
  DOI: 10.1109/TED.2020.2969445
• [24]
  Junil Lee, Ryoongbin Lee, Sihyun Kim, Kitae Lee, Hyun-Min Kim, Soyoun Kim, Munhyeon Kim, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, “Surface Ge-Rich p-type SiGe Channel Tunnel Field-Effect Transistor Fabricated by Local Condensation Technique,” Solid-State Electronics, Vol. 164, p. 107701 (1-5), Feb. 2020. [SCIE]
  DOI: 10.1016/j.sse.2019.107701
• [23]
  Kitae Lee, Junil Lee, Sihyun Kim, Ryoongbin Lee, Soyoun Kim, Munhyeon Kim, Jong-Ho Lee, Sangwan Kim, and Byung-Gook Park, “Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation,” IEEE Transactions on Nanotechnology, Vol. 19, No. 1, pp. 168-171, Feb. 2020. [SCIE]
  DOI: 10.1109/TNANO.2020.2972605
• [22]
  Yunho Choi, Kitae Lee, Kyoung Yeon Kim, Sihyun Kim, Junil Lee, Ryoongbin Lee, Hyun-Min Kim, Young Suh Song, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, “Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET,” Solid-State Electronics, Vol. 164, p. 107686 (1-7), Feb. 2020. [SCIE]
  DOI: 10.1016/j.sse.2019.107686

• [21]
  Junsu Yu, Sihyun Kim, Donghyun Ryu, Kitae Lee, Changha Kim, Jong-Ho Lee, Sangwan Kim, and Byung-Gook Park, “Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor,” Micromachines, Vol. 10, No. 11, p. 753 (1-9), Nov. 2019. [SCIE]
  DOI: 10.3390/app10144977
• [20]
  Jeesoo Chang, Sihyun Kim, Junil Lee, Ryoongbin Lee, Hyun-Min Kim, Kitae Lee, and Byung-Gook Park, “Partial Contact Etching and Gate Lowering on Tunneling Field Effect Transistor for Performance and Power Enhancement,” Micromachines, Vol. 10, No. 11, p. 753 (1-9), Nov. 2019. [SCIE]
  DOI: 10.3390/app10144977
• [19]
  Kitae Lee, Junil Lee, Sihyun Kim, Euyhwan Park, Ryoongbin Lee, Hyun-Min Kim, Sangwan Kim, and Byung-Gook Park, “Tunnel field effect transistor with ferroelectric gate insulator,” Journal of Nanoscience and Nanotechnology, Vol. 19, No. 10, pp. 6095-6098, Oct. 2019. [SCIE]
  DOI: 10.1166/jnn.2019.16994
• [18]
  Ryoongbin Lee, Kitae Lee, Sihyun Kim, Dae Woong Kwon, Sangwan Kim, and Byung-Gook Park, “Nonvolatile memory (NVM) operation of tunnel field-effect transistor (TFET) using ferroelectric HfO2 sidewall,” Journal of Nanoscience and Nanotechnology, Vol. 19, No. 10, pp. 6061-6065, Oct. 2019. [SCIE]
  DOI: 10.1166/jnn.2019.17001
• [17]
  Dae woong Kwon, Do-Bin Kim, Junil Lee, Sihyun Kim, Ryoongbin Lee, Jong-Ho Lee, and Byung-Gook Park, “Nonvolatile memory (NVM) operation of tunnel field-effect transistor (TFET) using ferroelectric HfO2 sidewall,” IEEE Transactions on Electron Devices, Vol. 66, No. 8, pp. 3326-3330, Aug. 2019. [SCIE]
  DOI: 10.1109/TED.2019.2920127
• [16]
  Junil Lee, Ryoongbin Lee, Sihyun Kim, Euyhwan Park, Hyun-Min Kim, Kitae Lee, Sangwan Kim, and Byung-Gook Park, “Fabrication methods for nanowire tunnel FET with locally concentrated silicon-germanium channel,” Journal of Semiconductor Technology and Science, Vol. 19, No. 1, pp. 18-23, Feb. 2019. [SCIE]
  DOI: 10.5573/JSTS.2019.19.1.018

• [15]
  Hyun-Min Kim, Dae Woong Kwon, Sihyun Kim, Kitae Lee, Junil Lee, Euyhwan Park, Ryoongbin Lee, Hyungjin Kim, Sangwan Kim, and Byung-Gook Park, “Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure,” Journal of Nanoscience and Nanotechnology, Vol. 18, No. 9, pp. 5882-5886, Sep. 2018. [SCIE]
  DOI: 10.1166/jnn.2018.15570
• [14]
  Hyungjin Kim, Sihyun Kim, Hyun-Min Kim, Kitae Kim, Sangwan Kim, and Byung-Gook Park, “A 1T dynamic random access memory cell based on gated thyristor with surrounding gate structure for high scalability,” Journal of Nanoscience and Nanotechnology, Vol. 18, No. 9, pp. 5919-5924, Sep. 2018. [SCIE]
  DOI: 10.1166/jnn.2018.15569
• [13]
  Sihyun Kim, Dae Woong Kwon, Sangwan Kim, Ryoongbin Lee, Tae-Hyeon Kim, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, “Analysis of current drift on p-channel pH-sensitive SiNW ISFET by capacitance measurement,” Current Applied Physics, Vol. 18, pp. S68-S74, Aug. 2018. [SCIE]
  DOI: 10.1016/j.cap.2017.11.021
• [12]
  Dae Woong Kwon, Ryoongbin Lee, Sihyun Kim, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, “A Novel Fabrication Method for Co-Integrating ISFET with Damage-Free Sensing Oxide and Threshold Voltage-Tunable CMOS Read-Out Circuits,” Sensors and Actuators B: Chemical, Vol. 260, pp. 627-634, May. 2018. [SCIE]
  DOI: 10.1016/j.snb.2017.12.193
• [11]
  Sihyun Kim, Dae Woong Kwon, Euyhwan Park, Junil Lee, Roongbin Lee, Jong-Ho Lee, and Byung-Gook Park, “Investigation of Silicide-Induced-Dopant-Activation for Steep Tunnel Junction in Tunnel Field Effect Transistor (TFET),” Solid-State Electronics, Vol. 140, pp. 41-45, Feb. 2018. [SCIE]
  DOI: 10.1016/j.sse.2017.10.013
• [10]
  Dae Woong Kwon, Junil Lee, Sihyun Kim, Ryoongbin Lee, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park, “Novel boosting scheme using asymmetric pass voltage for reducing program disturbance in 3-dimensional NAND flash memory,” IEEE Journal of the Electron Devices Society, Vol. 6, pp. 286-290, Feb. 2018. [SCIE]
  DOI: 10.1109/JEDS.2018.2801219

• [9]
  Ryoongbin Lee, Dae Woong Kwon, Sihyun Kim, Sangwan Kim, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, “Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor,” Japanese Journal of Applied Physics, Vol. 56, No. 12, p. 124001 (1-6), Nov. 2017. [SCIE]
  DOI: 10.7567/JJAP.56.124001
• [8]
  Sihyun Kim, Dae Woong Kwon, Ryoongbin Lee, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, “Novel Fabrication Method for Forming Damage-Free Sensing Oxide and Threshold Voltage-Tunable Complementary Metal-Oxide Semiconductor in a pH Sensor-CMOS Hybrid System,” Journal of Nanoscience and Nanotechnology, Vol. 17, No. 11, pp. 8265-8270, Nov. 2017. [SCIE]
  DOI: 10.1166/jnn.2017.15122
• [7]
  Ryoongbin Lee, Dae Woong Kwon, Sihyun Kim, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, “New Type of Ion-Sensitive Field-Effect Transistor with Sensing Region Separate from Gate-Controlled Region,” Journal of Nanoscience and Nanotechnology, Vol. 17, No. 11, pp. 8280-8284, Nov. 2017. [SCIE]
  DOI: 10.1166/jnn.2017.15123
• [6]
  Dae Woong Kwon, Sihyun Kim, Ryoongbin Lee, Hyun-Sun Mo, Dae Hwan Kim, and Byung-Gook Park, “Macro Modeling of Ion Sensitive Field Effect Transistor with Current Drift,” Sensors and Actuators B: Chemical, Vol. 249, pp. 564-5704, Oct. 2017. [SCIE]
  DOI: 10.1016/j.snb.2017.03.110
• [5]
  Ryoongbin Lee, Dae Woong Kwon, Sihyun Kim, Dae Hwan Kim, and Byung-Gook Park, “Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors,” Journal of Semiconductor Technology and Science, Vol. 17, No. 1, pp. 141-146, Feb. 2017. [SCIE]
  DOI: 10.5573/JSTS.2017.17.1.141

• [4]
  Daewoong Kwon, Jung Han Lee, Sihyun Kim, Ryoongbin Lee, Hyunsun Mo, Jisun Park, Dae Hwan Kim, and Byung-Gook Park, “Drift-Free pH Detection with Silicon Nanowire Field-Effect Transistors,” IEEE Electron Device Letters, Vol. 37, No. 5, pp. 652-655, May. 2016. [SCIE]
  DOI: 10.1109/LED.2016.2542846
• [3]
  Junil Lee, Dae Woong Kwon, Hyun Woo Kim, Jang Hyun Kim, Euyhwan Park, Taehyung Park, Sihyun Kim, Ryoongbin Lee, Jong-Ho Lee, and Byung-Gook Park, “Analysis on Temperature Dependent Current Mechanism of Tunnel Field-Effect Transistors,” Japanese Journal of Applied Physics, Vol. 55, No. 6S1, p. 06GG03 (1-4), Apr. 2016. [SCIE]
  DOI: 10.7567/JJAP.55.06GG03
• [2]
  Dae Woong Kwon, Jang Hyun Kim, Euyhwan Park, Junil Lee, Taehyung Park, Ryoongbin Lee, Sihyun Kim, and Byung-Gook Park, “Reduction Method of Gate-to-Drain Capacitance by Oxide Spacer Formation in Tunnel Field-Effect Transistor with Elevated Drain,” Japanese Journal of Applied Physics, Vol. 55, No. 6S1, p. 06GG04 (1-4), Apr. 2016. [SCIE]
  DOI: 10.7567/JJAP.55.06GG04
• [1]
  Sihyun Kim, Dae Woong Kwon, Ryoongbin Lee, Dae Hwan Kim, and Byung-Gook Park, “Investigation of Drift effect on Silicon Nanowire Field Effect Transistor based pH Sensor,” Japanese Journal of Applied Physics, Vol. 55, No. 6S1, p. 06GG01 (1-4), Apr. 2016. [SCIE]
  DOI: 10.7567/JJAP.55.06GG01